GMA06 datasheet(1/2 Pages) GTM

部品番号	GMA06

部品情報	NPN SILICON TRANSISTOR

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メーカー	GTM [GTM CORPORATION]

ホームページ	http://www.gtm.com.tw

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1/2

ISSUED DATE :2004/05/28

REVISED DATE :

G

G M

M A

A0066

N

N P

P N

N S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GMA06 is Amplifier Transistor.

Package Dimension

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

4

V

Collector Current

IC

500

mA

Total Power Dissipation at Ta=25 :

PD

1.2

W

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

V

IC=100uA

BVCEO

80

-

V

IC=1mA

BVEBO

4

-

V

IE=100uA

ICBO

-

100

nA

VCB=80V

ICEO

-

100

nA

VCE=60V

*VCE(sat)

-

250

mV

IC=100mA, IB=10mA

VBE(sat)

-

1.2

V

IC=100mA, VCE=1V

*hFE1

50

-

VCE=1V, IC=10mA

*hFE2

50

-

VCE=1V, IC=100mA

fT

100

-

MHz

VCE=2V, IC=10mA, f=100MHz

*Pulse Test:Pulse width 380us,Duty Cycle 2%

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