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データシートサーチシステム |
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データシートサーチシステム |
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IRLMS1503 データシート(PDF) 1 Page - International Rectifier |
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IRLMS1503 データシート(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Min. Typ. Max Units RθJA Maximum Junction-to-Ambient 75 °C/W Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 ™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Description 1/14/05 l Generation V Technology l Micro6 Package Style l Ultra Low RDS(on) l N-Channel MOSFET l Lead-Free Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.6 A IDM Pulsed Drain Current 18 PD @TA = 25°C Power Dissipation 1.7 W Linear Derating Factor 13 mW/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Ratings www.irf.com 1 Micro6 ™ IRLMS1503PbF HEXFET® Power MOSFET PD - 95762 VDSS = 30V RDS(on) = 0.10Ω Top View 1 2 D G A D D D S 3 4 5 6 |
同様の部品番号 - IRLMS1503 |
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同様の説明 - IRLMS1503 |
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