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TEA1110A データシート(PDF) 9 Page - NXP Semiconductors |
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TEA1110A データシート(HTML) 9 Page - NXP Semiconductors |
9 / 20 page 1997 Apr 22 9 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1110A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with “MIL STD 883C - method 3015”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VLN positive continuous line voltage VEE − 0.4 12 V repetitive line voltage during switch-on or line interruption VEE − 0.4 13.2 V Vn(max) maximum voltage on all pins VEE − 0.4 VCC + 0.4 V Iline line current RSLPE =20 Ω; see Figs 10 and 11 − 140 mA Ptot total power dissipation Tamb =75 °C; see Figs 10 and 11 TEA1110A − 588 mW TEA1110AT − 384 mW Tstg storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110A) 85 K/W thermal resistance from junction to ambient in free air; mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110AT) 130 K/W |
同様の部品番号 - TEA1110A |
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同様の説明 - TEA1110A |
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