データシートサーチシステム |
|
RJK4518DPK データシート(PDF) 2 Page - Renesas Technology Corp |
|
RJK4518DPK データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page RJK4518DPK Rev.1.00 Mar 20, 2007 page 2 of 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 450 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 0.11 0.13 Ω ID = 19.5 A, VGS = 10 V Note4 Input capacitance Ciss — 4100 — pF Output capacitance Coss — 440 — pF Reverse transfer capacitance Crss — 45 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 51 — ns Rise time tr — 118 — ns Turn-off delay time td(off) — 128 — ns Fall time tf — 91 — ns ID = 19.5 A VGS = 10 V RL = 11.5 Ω Rg = 10 Ω Total gate charge Qg — 93 — nC Gate to source charge Qgs — 21 — nC Gate to drain charge Qgd — 40 — nC VDD = 360 V VGS = 10 V ID = 39 A Body-drain diode forward voltage VDF — 0.96 1.60 V IF = 39 A, VGS = 0 Note4 Body-drain diode reverse recovery time trr — 390 — ns IF = 39 A, VGS = 0 diF/dt = 100 A/ µs Notes: 4. Pulse test |
同様の部品番号 - RJK4518DPK |
|
同様の説明 - RJK4518DPK |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |