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データシートサーチシステム |
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SSB-ULD-PQ1-1 データシート(PDF) 3 Page - DOMINANT Semiconductors |
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SSB-ULD-PQ1-1 データシート(HTML) 3 Page - DOMINANT Semiconductors |
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3 / 11 page  23/02/2006 V1.0 3 InGaN S-Spice : SSx-ULD DOMINANT TM Semiconductors Innovating Illumination Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1) Reverse voltage; Ir max = 10µA ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature Power dissipation (at room temperature) 20 250 5 2000 110 -40 … +100 -40 … +100 80 mA mA V V ˚C ˚C ˚C mW Material Material Lead-frame Package Cu Alloy With NiPdAu Plating High Temperature Resistant Epoxy Resin Note: product is Pb free Typ. (V) Vf @ If = 20mA Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Electrical Characteristics at Ta=25˚C Max. (V) Vr @ Ir = 10uA Min. (V) Part Number SSx-ULD 3.2 3.5 5 |
同様の部品番号 - SSB-ULD-PQ1-1 |
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同様の説明 - SSB-ULD-PQ1-1 |
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