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TSA5512T データシート(PDF) 11 Page - NXP Semiconductors |
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TSA5512T データシート(HTML) 11 Page - NXP Semiconductors |
11 / 20 page October 1992 11 Philips Semiconductors Product specification 1.3 GHz Bidirectional I2C-bus controlled synthesizer TSA5512 Notes to the characteristics 1. When a port is active, the collector voltage must not exceed 6 V. 2. Measured with all open-collector ports active. SCL and SDA inputs IIH HIGH level input current VIH = 5 V; VCC = 0 V −− 10 µA VIH = 5 V; VCC = 5 V −− 10 µA IIL LOW level input current VIL = 0V;VCC = 0 V −10 −−µA VIL = 0V;VCC = 5 V −10 −−µA Output SDA (pin 4; open collector) ILO output leakage current VO = 5.5 V −− 10 µA VO output voltage IO = 3 mA −− 0.4 V Charge-pump output PD (pin 1) IOH HIGH level output current (absolute value) CP = 1 90 220 300 µA IOL LOW level output current (absolute value) CP = 0 22 50 75 µA V1 output voltage in-lock 1.5 − 2.5 V I1leak off-state leakage current T0 = 1 −5 − 5nA Operational amplifier output UD (test mode T0 = 1) V18 output voltage VIL = 0 V −− 100 mV V18 output voltage when switched-off OS = 1; VIL = 2 V −− 200 mV G operational amplifier current gain; I18/(I1 - I1leak) OS = 0; VIL = 2 V; I18 = 10 µA 2000 −− SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
同様の部品番号 - TSA5512T |
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同様の説明 - TSA5512T |
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