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2SJ659 データシート(PDF) 4 Page - Sanyo Semicon Device

部品番号 2SJ659
部品情報  P-Channel Silicon MOSFET General-Purpose Switching Device
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メーカー  SANYO [Sanyo Semicon Device]
ホームページ  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ659 データシート(HTML) 4 Page - Sanyo Semicon Device

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2SJ659
No.8584-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PD -- Tc
A S O
VGS -- Qg
PD -- Ta
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
Case Temperature, Tc --
°C
Ambient Temperature, Ta --
°C
3
--1.0
--0.1
7
5
2
3
--10
7
5
2
3
--100
7
5
2
23
5
7
--100
--1.0
23
5
7
--10
IT08734
IT08733
048
12
24
16
20
0
--2
--4
--6
--8
--9
--1
--3
--5
--7
--10
VDS= --30V
ID= --14A
IT08736
0
0
20
40
60
80
100
120
45
30
40
35
25
140
160
20
15
10
5
IDP= --56A
ID= --14A
100
µs
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
IT08735
0
0
20
40
60
80
100
120
1.65
140
160
0.5
1.0
1.5
2.0
≤10
µs
Tc=25
°C
Single pulse
Note on usage : Since the 2SJ659 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.


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