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2SJ659 データシート(PDF) 4 Page - Sanyo Semicon Device |
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2SJ659 データシート(HTML) 4 Page - Sanyo Semicon Device |
4 / 4 page 2SJ659 No.8584-4/4 PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PD -- Tc A S O VGS -- Qg PD -- Ta Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V Case Temperature, Tc -- °C Ambient Temperature, Ta -- °C 3 --1.0 --0.1 7 5 2 3 --10 7 5 2 3 --100 7 5 2 23 5 7 --100 --1.0 23 5 7 --10 IT08734 IT08733 048 12 24 16 20 0 --2 --4 --6 --8 --9 --1 --3 --5 --7 --10 VDS= --30V ID= --14A IT08736 0 0 20 40 60 80 100 120 45 30 40 35 25 140 160 20 15 10 5 IDP= --56A ID= --14A 100 µs 1ms 10ms 100ms DC operation Operation in this area is limited by RDS(on). IT08735 0 0 20 40 60 80 100 120 1.65 140 160 0.5 1.0 1.5 2.0 ≤10 µs Tc=25 °C Single pulse Note on usage : Since the 2SJ659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. |
同様の部品番号 - 2SJ659 |
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同様の説明 - 2SJ659 |
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