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2N4126 データシート(PDF) 2 Page - Vishay Siliconix |
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2N4126 データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  2N4126 Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88116 2 07-May-02 Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit DC Current Gain hFE VCE = –1 V, IC = –2.0 mA 120 — 360 — VCE = –1 V, IC = –50 mA — 60 — Collector Cutoff Current –ICBO VCB = –20 V —— 50 nA Emitter Cutoff Current –IEBO VEB = –3 V —— 50 nA Collector Saturation Voltage –VCEsat IC = –50 mA, IB = –5 mA —— 0.4 V Base Saturation Voltage –VBEsat IC = –50 mA, IB = –5 mA —— 0.95 V Collector-Emitter Breakdown Voltage –V(BR)CEO IC = –1 mA 25 —— V Collector-Base Breakdown Voltage –V(BR)CBO IC = –10 µA 25 —— V Emitter-Base Breakdown Voltage –V(BR)EBO IE = –10 µA 4 —— V Gain-Bandwidth Product fT VCE = –5 V, IC = –10 mA — 200 — MHz f = 50 MHz Collector-Base Capacitance CCBO VCB = –10 V, f = 1MHz — 12 — pF Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) |
同様の部品番号 - 2N4126 |
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同様の説明 - 2N4126 |
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