データシートサーチシステム |
|
STP14NK60ZFP データシート(PDF) 5 Page - STMicroelectronics |
|
STP14NK60ZFP データシート(HTML) 5 Page - STMicroelectronics |
5 / 19 page STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris- 5/19 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±30V ± 10 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 6A 0.45 0.5 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 6A 11 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2220 240 57 pF pF pF Coss eq (2) . 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0V to 480V 122 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480V, ID = 12A VGS =10V 75 13.2 38.6 nC nC nC |
同様の部品番号 - STP14NK60ZFP |
|
同様の説明 - STP14NK60ZFP |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |