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TIP3055 データシート(PDF) 1 Page - Power Innovations Ltd |
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TIP3055 データシート(HTML) 1 Page - Power Innovations Ltd |
1 / 6 page TIP3055 NPN SILICON POWER TRANSISTOR PRODUCT INFORMATION 1 DECEMBER 1970 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q Designed for Complementary Use with the TIP2955 Series q 90 W at 25°C Case Temperature q 15 A Continuous Collector Current q Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω. 2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEBO 7 V Continuous collector current IC 15 A Continuous base current IB 7 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ½LIC 2 62.5 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 260 °C |
同様の部品番号 - TIP3055 |
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同様の説明 - TIP3055 |
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