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STP10NK80Z データシート(PDF) 4 Page - STMicroelectronics |
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STP10NK80Z データシート(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 800 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 10 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 4.5A 0.78 0.9 Ω Table 5. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 4.5A 9.6 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2180 205 38 pF pF pF Coss eq (2) . 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0V to 640V 105 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640V, ID = 9A VGS =10V (see Figure 19) 72 12.5 37 nC nC nC |
同様の部品番号 - STP10NK80Z_06 |
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同様の説明 - STP10NK80Z_06 |
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