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STK0380P データシート(PDF) 3 Page - AUK corp |
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STK0380P データシート(HTML) 3 Page - AUK corp |
3 / 4 page Preliminary Preliminary 3 STK0380P Electrical Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage V(BR)DSS ID=250 ㎂, VGS=0V 800 - - V Gate threshold voltage VGS(th) ID=250 ㎂, VGS= VDS 3.0 - 5.0 V Drain-source cut-off current IDSS VDS=800V, VGS=0V - - 10 ㎂ Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 ㎁ Drain-source on-resistance ④ RDS(on) VGS=10V, ID=1.5A - 4.0 4.8 Ω Forward transfer conductance ④ gfs VDS=50V, ID=1.5A - 3 - S Input capacitance Ciss - 562 705 Output capacitance Coss - 50 70 Reverse transfer capacitance Crss VGS=0V, VDS=25V f=1 MHz - 5.0 7.5 ㎊ Turn-on delay time td(on) - 15 40 Rise time tr - 43.5 95 Turn-off delay time td(off) - 22.5 55 Fall time tf VDD=400V, ID=3.0A RG=25Ω ③④ - 32 75 ㎱ Total gate charge Qg - 18 21.5 Gate-source charge Qgs - 3.4 - Gate-drain charge Qgd VDS=640V, VGS=10V ID=3.0A ③④ - 5.9 - nC Source-Drain Diode Ratings and Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Source current (DC) IS - - 3.0 Source current (Pulsed) ① ISP Integral reverse diode in the MOSFET - - 12 A Forward voltage ④ VSD VGS=0V, IS=3.0A - - 1.4 V Reverse recovery time trr - 642 - ㎱ Reverse recovery charge Qrr IS=3.0A, VGS=0V dIS/dt=100A/㎲ - 4.0 - μC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=67mH, I AS=3.0A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse width≤ 300 ㎲, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
同様の部品番号 - STK0380P |
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同様の説明 - STK0380P |
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