KSD-T0P009-000

3

STK830P

Electrical Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

500

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

10

㎂

Gate leakage current

-

-

±100

㎁

Drain-source on-resistance

④

-

-

1.5

Ω

Forward transfer conductance

④

-

3.3

-

S

Input capacitance

-

550

830

Output capacitance

-

46

70

Reverse transfer capacitance

f=1 MHz

-

8.4

15

㎊

Turn-on delay time

-

12

-

Rise time

-

46

-

Turn-off delay time

-

50

-

Fall time

-

48

-

㎱

Total gate charge

-

17

26

Gate-source charge

-

2.6

4.0

Gate-drain charge

-

5.8

9.0

nC

Source-Drain Diode Ratings and Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Source current (DC)

-

-

4.5

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

18

A

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

188

-

㎱

Reverse recovery charge

-

2.1

-

μC

Note ;

① Repetitive rating : Pulse width limited by maximum junction temperature

② L=20mH, I

④ Essentially independent of operating temperature