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NOV-05-2004
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1402CDG
TO-252 (DPAK)
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
VGS
±12
V
TC = 25 °C
45
Continuous Drain Current
TC = 100 °C
ID
30
Pulsed Drain Current
1
IDM
140
A
TC = 25 °C
48
Power Dissipation
TC = 100 °C
PD
20
W
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
Lead Temperature (
1/
16” from case for 10 sec.)
TL
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJC
2.6
Junction-to-Ambient
RθJA
110
°C / W
1Pulse width limited by maximum junction temperature.
2Duty cycle
≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
20
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
0.45 0.75
1.25
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±12V
±100
nA
VDS = 16V, VGS = 0V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 13.2V, VGS = 0V, TJ = 125 °C
10
µA
On-State Drain Current
1
ID(ON)
VDS = 5V, VGS = 4.5V
45
A
VGS = 2.5V, ID = 9A
18
26
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 5V, ID = 18A
11
14
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 18A
26
S
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
20
14mΩ
45A
G
D
S