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BCW66G データシート(PDF) 1 Page - Diotec Semiconductor |
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BCW66G データシート(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BCW66F ... BCW66H BCW66F ... BCW66H NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN Version 2006-07-31 Dimensions - Maße [mm] 1 = B 2 = E 3 = C Power dissipation – Verlustleistung 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW66F ... BCW66H Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 75 V Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0 5 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1000 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 10 V, IC = 100 µA BCW66F BCW66G BCW66H hFE hFE hFE 35 50 80 – – – – – – VCE = 1 V, IC = 10 mA BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 – – – – – – VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 250 160 250 350 250 400 630 VCE = 2 V, IC = 500 mA BCW66F BCW66G BCW66H hFE hFE hFE – – – 35 60 100 – – – 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 1.1 0.4 2.9 ±0.1 1 2 3 Type Code 1.9 |
同様の部品番号 - BCW66G |
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同様の説明 - BCW66G |
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