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BCP51 データシート(PDF) 2 Page - Diotec Semiconductor |
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BCP51 データシート(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page BCP51 ... BCP53 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCB = 30 V, Tj = 125°C, (E open) - ICB0 - ICB0 – – – – 100 nA 10 µA Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 5 V, (C open) - IEB0 – – 100 nA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT – 120 MHz – DC current gain ratio of the complementary pairs Verhältnis der Stromverstärkungen komplementärer Paare l IC l = 150 mA, l VCE l = 2 V hFE1/hFE2 –– 1.6 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BCP54 ... BCP56 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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同様の説明 - BCP51 |
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