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IRF3710SPBF データシート(PDF) 1 Page - International Rectifier

部品番号. IRF3710SPBF
部品情報  HEXFET® Power MOSFET ( VDSS = 100V , RDS(on) = 23mΩ , ID = 57A )
ダウンロード  11 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF3710SPBF Datasheet(HTML) 1 Page - International Rectifier

  IRF3710SPBF データシート HTML 1Page - International Rectifier IRF3710SPBF データシート HTML 2Page - International Rectifier IRF3710SPBF データシート HTML 3Page - International Rectifier IRF3710SPBF データシート HTML 4Page - International Rectifier IRF3710SPBF データシート HTML 5Page - International Rectifier IRF3710SPBF データシート HTML 6Page - International Rectifier IRF3710SPBF データシート HTML 7Page - International Rectifier IRF3710SPBF データシート HTML 8Page - International Rectifier IRF3710SPBF データシート HTML 9Page - International Rectifier Next Button
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IRF3710SPbF
IRF3710LPbF
HEXFET® Power MOSFET
9/16/04
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
‡
57
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
‡
40
A
IDM
Pulsed Drain Current
‡
180
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

28
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
5.8
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
PD - 95108
D2Pak
IRF3710SPbF
TO-262
IRF3710LPbF


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関連電子部品番号

部品番号コンポーネントの説明Html Viewメーカー
IRFP3710PBFHEXFET POWER MOSFET VDSS = 100V RDS on = 0.025Ω ID = 57A 1 2 3 4 5 MoreInternational Rectifier
IRF7342PBFHEXFET® Power MOSFET VDSS = -55V RDS on = 0.105Ω 1 2 3 4 5 MoreInternational Rectifier
IRFR120PBFHEXFET POWER MOSFET VDSS = 100V RDS on = 0.27Ω ID = 7.7A 1 2 3 4 5 MoreInternational Rectifier
IRL2910PBFHEXFET POWER MOSFET VDSS = 100V RDS on = 0.026Ω ID = 55A 1 2 3 4 5 MoreInternational Rectifier
IRF1407SPBFHEXFET® Power MOSFET VDSS = 75V RDS on = 0.0078Ω ID = 100A 1 2 3 4 5 MoreInternational Rectifier
IRFR2905ZPBFHEXFET® Power MOSFET VDSS = 55V RDS on = 14.5mΩ ID = 42A 1 2 3 4 5 MoreInternational Rectifier
IRFR4104PBFHEXFET® Power MOSFET VDSS = 40V RDS on = 5.5mΩ ID = 42A 1 2 3 4 5 MoreInternational Rectifier
IRL640PBFHEXFET Power MOSFET VDSS = 200V RDS on = 0.18Ω ID = 17A 1 2 3 4 5 MoreInternational Rectifier
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