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STGW39NC60VD データシート(PDF) 4 Page - STMicroelectronics |
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STGW39NC60VD データシート(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STGW39NC60VD 4/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC = 1mA, VGE = 0 600 V VCE(SAT) Collector-emitter saturation voltage VGE=15V, IC=30A,Tj=25°C VGE=15V, IC=30A,Tj=125°C 1.8 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250µA 3.75 5.75 V ICES Collector-emitter leakage current (VGE = 0) VCE = Max rating,Tc=25°C VCE= Max rating, Tc=125°C 500 5 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 30A 20 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1 MHz, VGE= 0 2900 298 59 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 30A, VGE = 15V, (see Figure 19) 126 16 46 nC nC nC |
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