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STPS8H100 データシート(PDF) 3 Page - STMicroelectronics |
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STPS8H100 データシート(HTML) 3 Page - STMicroelectronics |
3 / 9 page STPS8H100 Characteristics 3/9 Figure 3. Normalized avalanche power derating versus junction temperature Figure 4. Average forward current versus ambient temperature, δ = 0.5, (TO-220AC, D2PAK) 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 Tamb(°C) IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) T δ=tp/T =tp/T tp tp Figure 5. Average forward current versus ambient temperature, δ = 0.5, (TO-220FPAC) Figure 6. Non repetitive surge peak forward current versus overload duration - maximum values, per diode (TO-220AC, D2PAK) 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 Rth(j-a)=50°C/W Rth(j-a)=Rth(j-c) Tamb(°C) IF(av)(A) T δ=tp/T =tp/T tp tp 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 120 140 160 t(s) IM(A) Tc=75°C Tc=100°C Tc=125°C IM t δ=0.5 Figure 7. Non repetitive surge peak forward current versus overload duration - maximum values (TO-220FPAC) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC, D2PAK) 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 90 100 Tc=75°C Tc=100°C Tc=125°C t(s) IM(A) IM t δ=0.5 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) δ = 0.1 δ = 0.2 δ = 0.5 Single pulse T δ=tp/T =tp/T tp tp |
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