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STB25NM60N データシート(PDF) 5 Page - STMicroelectronics |
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STB25NM60N データシート(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB25NM60N/-1 - STF25NM60N - STP25NM60N - STW25NM60N Electrical characteristics 5/18 Table 6. Switching times Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD =300V, ID = 10A RG =4.7Ω VGS = 10V (see Figure 17) 24.5 18 94 24 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 20A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20A, di/dt = 100A/µs VDD = 100V, Tj = 25°C (see Figure 22) 427 7.2 33.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see Figure 22) 526 9.1 34.5 ns µC A |
同様の部品番号 - STB25NM60N |
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同様の説明 - STB25NM60N |
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