FDMS8680 datasheet(2/6 Pages) FAIRCHILD

部品番号	FDMS8680

部品情報	N-Channel PowerTrench짰 MOSFET 30V, 35A, 7.0m廓

Download	6 Pages

Scroll/Zoom	100%

メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

Logo

2 / 6 page

www.fairchildsemi.com

2

FDMS8680 Rev.C

Electrical Characteristics T

J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250µA, VGS = 0V

30

V

∆BV

DSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250µA, referenced to 25°C

24

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24V, VGS = 0V

1

µA

IGSS

Gate to Source Leakage Current

VGS = ±20V, VDS = 0V

±100

nA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

1.0

1.8

3.0

V

∆V

GS(th)

∆T

J

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250µA, referenced to 25°C

-5.7

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10V, ID = 14A

5.5

7.0

m

Ω

VGS = 4.5V, ID = 11.5A

8.5

11.0

VGS = 10V, ID = 14A, TJ = 125°C

8.2

10.5

gFS

Forward Transconductance

VDD = 10V, ID = 14A

72

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 15V, VGS = 0V,

f = 1MHz

1195

1590

pF

Coss

Output Capacitance

555

740

pF

Crss

Reverse Transfer Capacitance

95

145

pF

Rg

Gate Resistance

f = 1MHz

0.8

4.0

Ω

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 15V, ID = 14A,

VGS = 10V, RGEN = 6Ω

9

18

ns

tr

Rise Time

3

10

ns

td(off)

Turn-Off Delay Time

21

34

ns

tf

Fall Time

2

10

ns

Qg

Total Gate Charge

VGS = 0V to 10V

VDD = 15V,

ID = 14A

18

26

nC

Qg

Total Gate Charge

VGS = 0V to 5V

10

14

nC

Qgs

Gate to Source Charge

3.2

nC

Qgd

Gate to Drain “Miller” Charge

2.7

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0V, IS = 14A

(Note 2)

0.8

1.2

V

trr

Reverse Recovery Time

IF = 14A, di/dt = 100A/µs

27

44

ns

Qrr

Reverse Recovery Charge

15

27

nC

NOTES:

1. RθJA is determined with the device mounted on a 1in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

µs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V.

b. 125°C/W when mounted on a

minimum pad of 2 oz copper.

a. 50°C/W when mounted on a

1in2 pad of 2 oz copper.

同様の部品番号 - FDMS8680

メーカー	部品番号	データシート	部品情報
Texas Instruments	FDMS8680	975Kb / 34P	[Old version datasheet] Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck
Texas Instruments	FDMS8680	1,016Kb / 27P	[Old version datasheet] HIGH PERFORMANCE, SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER FOR NOTEBOOK POWER SUPPLY

More results

同様の説明 - FDMS8680

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FDB8160	329Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.8m廓
	FDD8896	1Mb / 11P	N-Channel PowerTrench짰 MOSFET 30V, 94A, 5.7m廓
	FDD8880	503Kb / 11P	N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓
ON Semiconductor	FDS8984-F085	485Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 7A, 23m廓 September-2017, Rev. 1
Fairchild Semiconductor	FDMS8662	210Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 49A, 2.0m廓
	FDD8870_F085	319Kb / 11P	N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
	FDP8896	474Kb / 10P	N-Channel PowerTrench짰 MOSFET 30V, 92A, 5.9m廓
	FDB8132	338Kb / 7P	N-Channel PowerTrench짰 MOSFET 30V, 80A, 1.6m廓
	FDB8870	223Kb / 11P	N-Channel PowerTrench짰 MOSFET 30V, 160A, 3.9m廓
	FDS8876	605Kb / 12P	N-Channel PowerTrench짰 MOSFET 30V, 12.5A, 8.2m廓