データシートサーチシステム |
|
IRFP254NPBF データシート(PDF) 2 Page - International Rectifier |
|
IRFP254NPBF データシート(HTML) 2 Page - International Rectifier |
2 / 8 page IRFP254NPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V trr Reverse Recovery Time ––– 210 310 ns TJ = 25°C, IF = 14A Qrr Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 23 92 A Starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 14A,VGS=10V Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: ISD ≤ 14A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 125 m Ω VGS = 10V, ID = 14A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 14A ––– ––– 25 µA VDS = 250V, VGS = 0V ––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 100 ID = 14A Qgs Gate-to-Source Charge ––– ––– 17 nC VDS = 200V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 125V tr Rise Time ––– 34 ––– ID = 14A td(off) Turn-Off Delay Time ––– 37 ––– RG = 3.6Ω tf Fall Time ––– 29 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2040 ––– VGS = 0V Coss Output Capacitance ––– 260 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 62 ––– pF ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 13 IDSS Drain-to-Source Leakage Current |
同様の部品番号 - IRFP254NPBF |
|
同様の説明 - IRFP254NPBF |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |