2SA1037 datasheet(1/1 Pages) TEL

部品番号	2SA1037

部品情報	Plastic-Encapsulated Transistors

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メーカー	TEL [TRANSYS Electronics Limited]

ホームページ	http://www.transyselectronics.com

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1. 3

2. 4

SOT-23 Plastic-Encapsulate

d Transistors

2SA1037

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM :

0.2

W (Tamb=25

℃)

Collector current

ICM :

-0.15

A

Collector-base voltage

V(BR)CBO : -60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-50

µA, I

E=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -1mA, IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -50

µA, I

C=0

-6

V

Collector cut-off current

ICBO

VCB=- 60 V , IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -6V ,

IC=0

-0.1

µA

DC current gain

hFE

VCE=-6V, IC= -1mA

120

560

Collector-emitter saturation voltage

VCE(sat)

IC=-50 mA, IB= -5mA

-0.5

V

Transition frequency

fT

VCE=-12V, IC= -2mA

f =30MHz

120

MHz

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

120-270

180-390

270-560

Marking

FQ

FR

FS

Unit: mm

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Transys

Electronics

LI M ITE D

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