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IRFB9N30APBF データシート(PDF) 1 Page - International Rectifier |
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IRFB9N30APBF データシート(HTML) 1 Page - International Rectifier |
1 / 8 page 06/01/04 www.irf.com 1 HEXFET® Power MOSFET Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G VDSS = 300V RDS(on) = 0.45Ω ID = 9.3A l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements Description Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance IRFB9N30APbF PD- 95350 TO-220AB Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.3 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.9 A IDM Pulsed Drain Current 37 PD @TC = 25°C Power Dissipation 96 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy 160 mJ IAR Avalanche Current 9.3 A EAR Repetitive Avalanche Energy 9.6 mJ dv/dt Peak Diode Recovery dv/dt 4.6 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings l Lead-Free |
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