BD433 datasheet(2/3 Pages) TEL

部品番号	BD433

部品情報	EPITAXIAL SILICON POWER TRANSISTORS

Download	3 Pages

Scroll/Zoom	100%

メーカー	TEL [TRANSYS Electronics Limited]

ホームページ	http://www.transyselectronics.com

Logo

2 / 3 page

EPITAXIAL SILICON POWER TRANSISTORS

BD433

BD434

BD435

BD436

BD437

BD438

BD439

BD440

BD441

BD442

NPN

PNP

TO126

Plastic Package

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BD433 BD435 BD437 BD439 BD441

BD434 BD436 BD438 BD440 BD442

DC Current Gain

*hFE

>40

>30

>20

>15

>85

>40

>50

>40

>25

>15

fT

>3.0

MHz

*Pulsed Pulse Duration=300

µµs, Duty Cycle=1.5%

Matched

Pairs

*hFE1 / hFE2

IC=500mA, VCE=1V ALL

UNIT

<1.4

IC=500mA, VCE=1V

IC=2.0A, VCE=1V

IC=10mA, VCE=5V

TEST CONDITION

IC=250mA, VCE=1V ALL

Current Gain Bandwidth

Product

B

C

E

同様の部品番号 - BD433

メーカー	部品番号	データシート	部品情報
STMicroelectronics	BD433	70Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS
Savantic, Inc.	BD433	103Kb / 3P	Silicon NPN Power Transistors
Siemens Semiconductor G...	BD433	180Kb / 5P	NPN SILICON EPIBASE TRANSISTORS
Continental Device Indi...	BD433	136Kb / 4P	EPITAXIAL SILICON POWER TRANSISTORS
Siemens Semiconductor G...	BD433	183Kb / 5P	PNP SILICON EPIBASE TRANSISTORS

More results

同様の説明 - BD433

メーカー	部品番号	データシート	部品情報
Continental Device Indi...	BD233	492Kb / 4P	EPITAXIAL SILICON POWER TRANSISTORS
	CJD175	283Kb / 3P	EPITAXIAL SILICON POWER TRANSISTORS
	BD136	180Kb / 4P	EPITAXIAL SILICON POWER TRANSISTORS
	BD131	147Kb / 3P	SILICON EPITAXIAL POWER TRANSISTORS
	BD175	222Kb / 3P	EPITAXIAL SILICON POWER TRANSISTORS
TRANSYS Electronics Lim...	BD175	68Kb / 2P	EPITAXIAL SILICON POWER TRANSISTORS
Continental Device Indi...	MJE15032	286Kb / 3P	SILICON EPITAXIAL POWER TRANSISTORS
	BD433	136Kb / 4P	EPITAXIAL SILICON POWER TRANSISTORS
	MJE13002	153Kb / 4P	NPN EPITAXIAL SILICON POWER TRANSISTORS
New Jersey Semi-Conduct...	BD131	74Kb / 2P	SILICON PLANAR EPITAXIAL POWER TRANSISTORS