データシートサーチシステム |
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STG719 データシート(PDF) 1 Page - STMicroelectronics |
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STG719 データシート(HTML) 1 Page - STMicroelectronics |
1 / 10 page 1/10 November 2004 s HIGH SPEED: tPD = 0.3ns (TYP.) at VCC = 5V tPD = 0.4ns (TYP.) at VCC = 3.3V s LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C s LOW "ON" RESISTANCE: RON = 4Ω (MAX. TA=25°C) AT VCC = 5V RON = 6Ω (TYP.) AT VCC = 3V s WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 1.8V TO 5.5V SINGLE SUPPLY DESCRIPTION The STG719 is an high-speed S.P.D.T. (Single Pole Double Throw) SWITCH fabricated in silicon gate C2MOS technology. It designed to operate from 1.8V to 5.5V, making this device ideal for portable applications, audio signal routing, video switching, mobile and communication systems. It offers 4 Ω ON-Resistance Max at 5V 25°C and very low ON-Resistance Flatness. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns), Break Before Make Delay Time and Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. It’s available in the commercial and extended temperature range. STG719 LOW VOLTAGE 4 Ω SPDT SWITCH Figure 1: Pin Connection And IEC Logic Symbols Table 1: Order Codes PACKAGE T & R SOT23-6L STG719STR SOT23-6L Rev. 8 |
同様の部品番号 - STG719 |
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同様の説明 - STG719 |
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