IRF840LCS datasheet(1/2 Pages) TEL

部品番号	IRF840LCS

部品情報	Power MOSFET

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メーカー	TEL [TRANSYS Electronics Limited]

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N Channel

IRF840LCS/LCL

Power MOSFET

V

DSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A

D

G

S

Symbol

Maximum Operating Temperature Range (Tj)

-55 to +150 C

Maximum Storage Temperature Range (Tstg) -55 to +150 C

Thermal Resistance

(Junction to Ambient)

RTH (J-A)

W

Volt

MAXIMUM RATINGS

Gate to Source Voltage

Parameter

Unit

Drain to Source

Voltage

Amp

Continuous Drain Current

ID

Symbol

VGS

VDSS

Amp

Pulsed Drain Current

IDM

Total Power Dissapation

Condition

PD

Value

(Tj = 25 C unless stated otherwise)

500

125

28

8.0

+/- 30V

(TA = 25 C)

40

Volt

C/W

ELECTRICAL CHARACTERISICS at

Parameter

Unit

Symbol

Test Conditions

V(BR)DSS

Drain to Source Breakdown Voltage

VGS = 0 VDC,

Volt

Tj = 25 C Maximum. Unless stated Otherwise

Value

Drain to Source Leakage Current

IGSS

VDS = 500VDC, VGS = 0VDC

Typ

Min

Max

500

-

C

Tj=125

VDS = 400VDC, VGS = 0VDC

25

-

--

250

Gate to Source Leakage Current

IDSS

VGS = +20VDC

100

-

--

-100

nA

VGS = -20VDC

Gate Threshold Voltage

VDS = VGS,

VGS(th)

Volt

2.0

-

Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.8A

Gate Charge

QG

ID = 8.0A

nC

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

39

-

nC

Input Capacitance

VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ

Output Capacitance

Transfer Capacitance

CISS

COSS

CRSS

pF

-

1100

170

18

Turn On Delay Time

Turn Off Delay Time

Rise Time

Fall Time

td(on)

tr

td(off)

tf

--

12

25

--

27

--

19

nS

VDD = 250VDC, ID = 8.0A, RG = 9.1

RD = 31

Continuous Source Current

IS

Pulsed Source Current

Forward Voltage (Diode)

ISM

VSD

VGS = 0VDC, IS =8.0A,

A

V

-

--

28

-

µA

ID = 250µA

4.0

-

0.85

-

10

VDS = 400VDC,

VGS = 10VDC

19

2.0

Tp = 300µS

-

Single Pulse Avalanche Energy

EAS

510

mj

Single Pulse Avalanche Energy

Page 1 of 2

8.0

同様の部品番号 - IRF840LCS

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF840LCS	173Kb / 10P	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
Vishay Siliconix	IRF840LCS	1Mb / 8P	Power MOSFET S-Pending-Rev. A, 02-Jun-08
	IRF840LCS	175Kb / 9P	Power MOSFET Rev. C, 30-May-11
	IRF840LCS	231Kb / 10P	Power MOSFET 01-Jan-2022
	IRF840LCSPBF	1Mb / 8P	Power MOSFET S-Pending-Rev. A, 02-Jun-08

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