2SJ655 datasheet(2/5 Pages) SANYO

部品番号	2SJ655

部品情報	P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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メーカー	SANYO [Sanyo Semicon Device]

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2SJ655

No.7712-2/5

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Input Capacitance

Ciss

VDS=--20V, f=1MHz

2090

pF

Output Capacitance

Coss

VDS=--20V, f=1MHz

155

pF

Reverse Transfer Capacitance

Crss

VDS=--20V, f=1MHz

108

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

17

ns

Rise Time

tr

See specified Test Circuit.

95

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

187

ns

Fall Time

tf

See specified Test Circuit.

95

ns

Total Gate Charge

Qg

VDS=--50V, VGS=--10V, ID=--12A

41

nC

Gate-to-Source Charge

Qgs

VDS=--50V, VGS=--10V, ID=--12A

7

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--50V, VGS=--10V, ID=--12A

9

nC

Diode Forward Voltage

VSD

IS=--12A, VGS=0V

--0.88

--1.2

V

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)

7508-003

Avalanche Resistance Test Circuit

10.0

3.2

4.5

2.8

1.6

1.2

0.7

0.75

2.55

12

3

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220ML

PW=10

µs

D.C.

≤1%

P.G

50

Ω

G

S

D

ID= --6A

RL=8.33Ω

VDD= --50V

VOUT

2SJ655

VIN

0V

--10V

VIN

50

Ω

0V

--10V

≥50Ω

RG

VDD

L

2SJ655

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