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74HCT2G04GW データシート(PDF) 8 Page - NXP Semiconductors |
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74HCT2G04GW データシート(HTML) 8 Page - NXP Semiconductors |
8 / 14 page 74HC_HCT2G04_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 15 November 2006 8 of 14 NXP Semiconductors 74HC2G04; 74HCT2G04 Dual inverter [1] tpd is the same as tPLH and tPHL. [2] tt is the same as tTLH and tTHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. 12. Waveforms 74HCT2G04 tpd propagation delay nA to nY; see Figure 5 [1] VCC = 4.5 V; CL = 50 pF - 10 18 - 23 29 ns tt transition time nY; see Figure 5 [2] VCC = 4.5 V; CL = 50 pF - 6 15 - 19 22 ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V [3] -9- - - - pF Table 9. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) Measurement points are given in Table 10. VOL and VOH are typical voltage output drop that occur with the output load. Fig 5. The data input (nA) to output (nY) propagation delays and output transition times mna722 tPLH tPHL VM VM 90% 10% VM VM nY output nA input VI GND VOH VOL tTLH tTHL Table 10. Measurement points Type Input Output VM VI tr = tf VM 74HC2G04 0.5VCC GND to VCC 6.0 ns 0.5VCC 74HCT2G04 1.3 V GND to 3.0 V 6.0 ns 1.3 V |
同様の部品番号 - 74HCT2G04GW |
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同様の説明 - 74HCT2G04GW |
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