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BF909 データシート(PDF) 5 Page - NXP Semiconductors |
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BF909 データシート(HTML) 5 Page - NXP Semiconductors |
5 / 12 page NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R Fig.4 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.18. VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb =25 °C; RG1 = 120 kΩ. handbook, halfpage 0 110 100 90 80 10 50 MLB936 20 30 40 Vunw (dB µV) gain reduction (dB) Fig.5 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 30 20 10 0 0.4 2.0 MLB937 0.8 1.2 1.6 I D (mA) V (V) G1 S V = 4 V 3 V 2.5 V 2 V 1.5 V 1 V G2 S Fig.6 Output characteristics; typical values. VDS =5V. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 30 20 10 0 210 MLB938 46 8 I D (mA) V (V) DS 1.3 V 1.2 V 1.1 V 1.0 V 0.9 V V = 1.4 V G1 S Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 01 23 200 150 50 0 100 MLB939 I G1 ( µA) V (V) G1 S 3 V 2.5 V 2 V 3.5 V V = 4 V G2 S Rev. 02 - 19 November 2007 5 of 12 |
同様の部品番号 - BF909 |
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同様の説明 - BF909 |
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