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TPCF8304 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPCF8304
部品情報  TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8304 データシート(HTML) 1 Page - Toshiba Semiconductor

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TPCF8304
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.9 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-30
V
Gate-source voltage
VGSS
±
20
V
DC
(Note 1)
ID
-3.2
Drain current
Pulse
(Note 1)
IDP
-12.8
A
Single-device operation
(Note 3a)
PD (1)
1.35
Drain power
dissipation
(t
= 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (2)
1.12
Single-device operation
(Note 3a)
PD (1)
0.53
Drain power
dissipation
(t
= 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
PD (2)
0.33
W
Single-pulse avalanche energy
(Note 4)
EAS
0.67
mJ
Avalanche current
IAR
-1.6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: For Notes 1 to 6, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
1
2
3
4
8
7
6
5


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