TPCP8J01_07 datasheet(3/9 Pages) TOSHIBA

部品番号	TPCP8J01

部品情報	TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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3 / 9 page

TPCP8J01

2006-11-17

3

Electrical Characteristics (Ta = 25°C)

MOSFET

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = −32 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−32

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 20 V

−15

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = − 1mA

−0.8

⎯

−2.0

V

VGS = −4 V, ID = −3.0 A

⎯

38

49

Drain-source ON resistance

RDS (ON)

VGS = −10 V, ID = −3.0 A

⎯

27

35

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −3.0 A

4.8

9.6

⎯

S

Input capacitance

Ciss

⎯

1760

⎯

Reverse transfer capacitance

Crss

⎯

200

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

210

⎯

pF

Rise time

tr

⎯

2.8

⎯

Turn-on time

ton

⎯

12

⎯

Fall time

tf

⎯

22

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

90

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

34

⎯

Gate-source charge 1

Qgs1

⎯

4.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −24 V, VGS = −10 V,

ID = −5.5 A

⎯

7.2

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current (Pulse) (Note 1)

IDRP

⎯

−22

A

Forward voltage (diode)

VDSF

IDR = −5.5 A, VGS = 0 V

⎯

1.2

V

VDD ∼− −15 V



−10 V

VGS

0 V

ID = −3.0 A

VOUT

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同様の説明 - TPCP8J01_07

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TPCP8J01 データシート(PDF) 3 Page - Toshiba Semiconductor

TPCP8J01 データシート(HTML) 3 Page - Toshiba Semiconductor

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TPCP8J01 データシート(PDF) 3 Page - Toshiba Semiconductor

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同様の説明 - TPCP8J01_07

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