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TPCP8401 データシート(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8401 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 10 page TPCP8401 2006-11-13 1 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive • Small footprint due to small and thin package • Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) • Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −12 V) • Enhancement−mode : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) P-ch Characteristics Symbol Rating Unit Drain-source voltage VDSS −12 V Drain-gate voltage (RGS = 20 kΩ) VDGR −12 V Gate-source voltage VGSS ±8 V DC (Note 1) ID −5.5 Drain current Pulse (Note 1) IDP −22.0 A Drain power dissipation (t = 5 s) (Note 2a) PD 1.96 W Drain power dissipation (t = 5 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 5.3 mJ Avalanche current IAR −2.8 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.22 mJ Channel temperature Tch 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3V1G Weight: 0.017 g (typ.) Circuit Configuration Marking (Note5) 1 2 3 4 8 7 6 5 8401 1 2 3 4 8 7 6 5 ※ Lot No. 1.Source(Nch) 2.Drain(Pch) 3.Drain(Pch) 4.Drain(Pch) 5.Gate(Pch) 6.Source(Pch) 7.Gate(Nch) 8.Drain(Nch) 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 |
同様の部品番号 - TPCP8401 |
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同様の説明 - TPCP8401 |
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