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TPCP8401 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPCP8401
部品情報  TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8401 データシート(HTML) 1 Page - Toshiba Semiconductor

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TPCP8401
2006-11-13
1
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ)
TPCP8401
Switching Regulator Applications
Load Switch Applications
• Lead(Pb)-Free
• Multi-chip discrete device; built-in P channel MOS FET for main
switch and N Channel MOS FET for drive
• Small footprint due to small and thin package
• Low drain-source ON resistance
: P Channel RDS (ON) = 31 mΩ (typ.)
• Low drain-source ON resistance
High forward transfer admittance
: P Channel |Yfs| = 13 S (typ.)
• Low leakage current
: P Channel IDSS = −10 μA (VDS = −12 V)
• Enhancement−mode
: P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
P-ch
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−12
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−12
V
Gate-source voltage
VGSS
±8
V
DC
(Note 1)
ID
−5.5
Drain current
Pulse (Note 1)
IDP
−22.0
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
1.96
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
5.3
mJ
Avalanche current
IAR
−2.8
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.22
mJ
Channel temperature
Tch
150
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
Marking (Note5)
1
2
3
4
8
7
6
5
8401
1
2
3
4
8
7
6
5
Lot No.
1.Source(Nch)
2.Drain(Pch)
3.Drain(Pch)
4.Drain(Pch)
5.Gate(Pch)
6.Source(Pch)
7.Gate(Nch)
8.Drain(Nch)
0.33±0.05
0.28+0.1
-0.11
1.12+0.13
-0.12
0.475
0.65
A
0.05 M
2.9±0.1
4
1
5
8
0.8±0.05
0.17±0.02
B
B
0.05 M
A
S
0.025
S
1.12+0.13
-0.12
0.28+0.1
-0.11


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