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TPD4113K データシート(PDF) 11 Page - Toshiba Semiconductor |
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TPD4113K データシート(HTML) 11 Page - Toshiba Semiconductor |
11 / 24 page TPD4113K 2006-11-01 11 Description of Protection Function (1) Over-current protection This product incorporates the over-current protection circuit to protect itself against over-current at startup or when a motor is locked. This protection function detects voltage generated in the current detection resistor connected to the RS pin. When this voltage exceeds VR = 0.5 V (typ.), the IGBT output, which is on, temporarily shuts down after a dead time , preventing any additional current from flowing to this product. The next all “L” signal releases the shutdown state. (2) Under-voltage protection This product incorporates an under-voltage protection circuit to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to this product internal setting (VCCUVD = 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is automatically restored and the IGBT is turned on/off again by the input. When the VBS supply voltage drops (VBSUVD = 9 V typ.), the high-side IGBT output shuts down. When the VBSUVR (= 9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is turned on/off again by the input signal. (3) Thermal shutdown This product incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat generation all IGBT outputs shut down regardless of the input. This protection function has hysteresis ( ΔTSD = 50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on/off again by the input. Because the chip contains just one temperature-detection location, when the chip heats up due to the IGBT, for example, the differences in distance between the detection location and the IGBT (the source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the initial thermal shutdown temperature. Safe Operating Area Note 1: The above safe operating areas are at Tj = 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature exceeds these, the safe operation areas are reduced. Note 2: The above safe operating areas include the over-current protection operation area. 0.83 Power supply voltage VBB (V) Figure 1 SOA at Tj = 135°C Power supply voltage VBB (V) Figure 2 SOA at Tc = 95°C 0 450 0 0.9 0 450 0 400 0.9 400 1.0 |
同様の部品番号 - TPD4113K_07 |
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同様の説明 - TPD4113K_07 |
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