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2SC4215 データシート(PDF) 1 Page - Toshiba Semiconductor |
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2SC4215 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC4215 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2dB (typ.) (f = 100 MHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 4 V, IC = 0 ⎯ ⎯ 0.5 μA DC current gain hFE (Note) VCE = 6 V, IC = 1 mA 40 ⎯ 200 Reverse transfer capacitance Cre VCB = 10 V, f = 1 MHz ⎯ 0.55 ⎯ pF Transition frequency fT VCE = 6 V, IC = 1 mA 260 550 ⎯ MHz Collector-base time constant Cc・rbb’ VCE = 6 V, IE = −1 mA, f = 30 MHz ⎯ ⎯ 25 ps Noise figure NF ⎯ 2 5.0 dB Power gain Gpe VCC = 6 V, IE = −1 mA, f = 100 MHz, Figure 1 17 23 ⎯ dB Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) |
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