1SS404

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS404

High Speed Switching Applications

• Two-pin small packages are suitable for higher mounting densities

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

25

V

Reverse voltage

20

V

Maximum (peak) forward current

700

mA

Average forward current

300

mA

Power dissipation

P

200 (Note 1)

mW

Junction temperature

125

°C

Storage temperature range

−55 ~ 125

°C

Operating temperature range

−40 ~ 100

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on a glass epoxy board of 20 mm

× 20 mm,

pad dimension 4 mm

× 4 mm.

Marking

Equivalent Circuit (top view)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

⎯

0.16

⎯

⎯

0.22

⎯

Forward voltage

⎯

0.38

0.45

V

Reverse current

⎯

⎯

50

μA

Total capacitance

⎯

46

⎯

pF

Unit: mm

USC

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

S 5