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2SJ334 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SJ334 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ334 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −60 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −15 A — 46 60 Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −15 A — 29 38 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −15 A 14 23 — S Input capacitance Ciss — 3300 — Reverse transfer capacitance Crss — 460 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 1450 — pF Rise time tr — 20 — Turn−on time ton — 25 — Fall time tf — 35 — Switching time Turn−off time toff — 130 — ns Total gate charge (Gate−source plus gate−drain) Qg — 110 — Gate−source charge Qgs — 75 — Gate−drain (“miller”) charge Qgd VDD ≈ −48 V, VGS = −10 V, ID = −30 A — 35 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 30 A Pulse drain reverse current (Note 1) IDRP — — — 120 A Forward voltage (diode) VDSF IDR = −30 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 100 — ns Reverse recovery charge Qrr IDR = −30 A, VGS = 0 V dIDR / dt = 50 A / μs — 0.16 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. J334 Part No. (or abbreviation code) |
同様の部品番号 - 2SJ334 |
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同様の説明 - 2SJ334 |
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