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2SJ334 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SJ334
部品情報  DC−DC Converter, Relay Drive and Motor Drive Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ334 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SJ334
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = −60 V, VGS = 0 V
−100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −15 A
46
60
Drain−source ON resistance
RDS (ON)
VGS = −10 V, ID = −15 A
29
38
mΩ
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −15 A
14
23
S
Input capacitance
Ciss
3300
Reverse transfer capacitance
Crss
460
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
1450
pF
Rise time
tr
20
Turn−on time
ton
25
Fall time
tf
35
Switching time
Turn−off time
toff
130
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
110
Gate−source charge
Qgs
75
Gate−drain (“miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −30 A
35
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
30
A
Pulse drain reverse current
(Note 1)
IDRP
120
A
Forward voltage (diode)
VDSF
IDR = −30 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
100
ns
Reverse recovery charge
Qrr
IDR = −30 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.16
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
J334
Part No. (or abbreviation code)


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