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2SK2266 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SK2266 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2266 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut–off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain–source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 15 A — 40 55 Drain–source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 22 30 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 27 — S Input capacitance Ciss — 1800 — Reverse transfer capacitance Crss — 350 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 900 — pF Rise time tr — 20 — Turn–on time ton — 30 — Fall time tf — 40 — Switching time Turn–off time toff — 130 — ns Total gate charge (Gate–source plus gate–drain) Qg — 60 — Gate–source charge Qgs — 40 — Gate–drain (“miller”) charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 45 A — 20 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 45 A Pulse drain reverse current (Note 1) IDRP — — — 180 A Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.8 V Reverse recovery time trr — 90 — ns Reverse recovery charge Qrr IDR = 45 A, VGS = 0 V, dIDR / dt = 50 A / μs — 0.1 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2266 Part No. (or abbreviation code) |
同様の部品番号 - 2SK2266 |
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同様の説明 - 2SK2266 |
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