2SK2376 datasheet(2/6 Pages) TOSHIBA

部品番号	2SK2376

部品情報	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK2376

2006-11-17

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = 60 V, VGS = 0 V

—

100

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

—

2.0

V

VGS = 4 V, ID = 25 A

—

19

25

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 25 A

—

13

17

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 25 A

28

40

—

S

Input capacitance

Ciss

—

3350

—

Reverse transfer capacitance

Crss

—

550

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

1600

—

pF

Rise time

tr

—

25

—

Turn−on time

ton

—

55

—

Fall time

tf

—

60

—

Switching time

Turn−off time

toff

—

180

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

110

—

Gate−source charge

Qgs

—

70

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 45 A

—

40

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

45

A

Pulse drain reverse current

(Note 1)

IDRP

—

180

A

Forward voltage (diode)

VDSF

IDR = 45 A, VGS = 0 V

—

−1.7

V

Reverse recovery time

trr

—

120

—

ns

Reverse recovery charge

Qrr

IDR = 45 A, VGS = 0 V

dIDR / dt = 50 A / μs

—

0.2

—

μC

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K2376

Part No. (or abbreviation code)

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