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2SK2417 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SK2417
部品情報  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2417 データシート(HTML) 2 Page - Toshiba Semiconductor

  2SK2417_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SK2417_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SK2417_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SK2417_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SK2417_06 Datasheet HTML 5Page - Toshiba Semiconductor 2SK2417_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SK2417
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 250 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 3.5 A
0.42
0.5
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3.5 A
4
7.5
S
Input capacitance
Ciss
700
Reverse transfer capacitance
Crss
80
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
270
pF
Rise time
tr
10
Turn−on time
ton
20
Fall time
tf
10
Switching time
Turn−off time
toff
70
ns
Total gate charge
(Gate−source plus gate−drain)
Qg
20
Gate−source charge
Qgs
13
Gate−drain (“miller”) charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 7.5 A
7
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
7.5
A
Pulse drain reverse current
(Note 1)
IDRP
30
A
Forward voltage (diode)
VDSF
IDR = 7.5 A, VGS = 0 V
−2.0
V
Reverse recovery time
trr
180
ns
Reverse recovery charge
Qrr
IDR = 7.5 A, VGS = 0 V
dIDR / dt = 100 A / μs
1.1
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2417
Part No. (or abbreviation code)


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