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2SJ567 データシート(PDF) 5 Page - Toshiba Semiconductor

部品番号 2SJ567
部品情報  Silicon P-Channel MOS Type Switching Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ567 データシート(HTML) 5 Page - Toshiba Semiconductor

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2SJ567
2006-11-16
5
Pulse width tw (S)
rth – tw
Drain-source voltage VDS (V)
Safe operating area
0.001
10
μ
100
μ
1 m
10 m
100 m
1
10
100
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
T
PDM
t
Duty
= t/T
Rth (ch-c) = 6.25°C/W
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
ID max (pulse) *
DC
operation
100
μs*
1 ms*
VDSS max
−0.005
−0.1
−0.3
−1
−3
−10
−30
−100
−300
−0.01
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−5
−10
−30
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
Channel temperature Tch (°C)
EAS – Tch
0
25
20
40
60
100
80
50
75
100
125
150
−15 V
15 V
Test circuit
Waveform
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = −50 V, L = 25.2 mH
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS


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