データシートサーチシステム |
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2SK2886 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SK2886 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2886 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V RDS(ON) VGS = 4 V, ID = 25 A — 27 36 Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 25 A — 14 20 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 18 31 — S Input capacitance Ciss — 2200 — Reverse transfer capacitance Crss — 390 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 1090 — pF Rise time tr — 40 — Turn−on time ton — 70 — Fall time tf — 130 — Switching time Turn−off time toff — 360 — ns Total gate charge (gate−source plus gate−drain) Qg — 66 — Gate−source charge Qgs — 43 — Gate−drain (“miller”) Charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 45 A — 23 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 45 A Pulse drain reverse current (Note 1) IDRP — — — 135 A Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 78 — ns Reverse recovery charge Qrr IDR = 45 A, VGS = 0 V dIDR / dt = 50 A / μs — 90 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2886 Part No. (or abbreviation code) |
同様の部品番号 - 2SK2886 |
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同様の説明 - 2SK2886 |
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