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2SK3126 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SK3126
部品情報  Silicon N Channel MOS Type Switching Regulator Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3126 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SK3126
2006-11-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate−source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
3.4
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.48
0.65
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3.5
7.5
S
Input capacitance
Ciss
1400
Reverse transfer capacitance
Crss
240
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
590
pF
Rise time
tr
35
Turn−on time
ton
50
Fall time
tf
80
Switching time
Turn−off time
toff
260
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
35
Gate−source charge
Qgs
19
Gate−drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
16
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1400
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
14
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3126
Part No. (or abbreviation code)


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