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2SK3127 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SK3127
部品情報  Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3127 データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK3127
2007-03-16
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π-MOS VI)
2SK3127
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
• Low drain-source ON resistance: RDS (ON) = 9.5 Ω (typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
• Enhancement-mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation
(Tc
= 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
524
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Please use devices on condition that the channel temperature is
below 150
°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 186 μH, RG = 25 Ω,
IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction
temperature.
Note 4: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.92
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)


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