データシートサーチシステム |
|
2SK3127 データシート(PDF) 1 Page - Toshiba Semiconductor |
|
2SK3127 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SK3127 2007-03-16 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOS VI) 2SK3127 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 38 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement-mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 45 Drain current Pulse (Note 1) IDP 135 A Drain power dissipation (Tc = 25°C) PD 65 W Single pulse avalanche energy (Note 2) EAS 524 mJ Avalanche current IAR 45 A Repetitive avalanche energy (Note 3) EAR 6 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Please use devices on condition that the channel temperature is below 150 °C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 186 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.92 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ⎯ JEITA ⎯ TOSHIBA 2-10S2B Weight: 1.5 g (typ.) |
同様の部品番号 - 2SK3127_07 |
|
同様の説明 - 2SK3127_07 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |