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2SK3131 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 2SK3131
部品情報  Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3131 データシート(HTML) 2 Page - Toshiba Semiconductor

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2SK3131
2006-11-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate−source breakdown voltage
V (BR) GSS
IG = ±100 μA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
3.4
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
0.085
0.11
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
15
35
S
Input capacitance
Ciss
11000
Reverse transfer capacitance
Crss
2100
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
4200
pF
Rise time
tr
105
Turn−on time
ton
160
Fall time
tf
65
Switching time
Turn−off time
toff
245
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
280
Gate−source charge
Qgs
150
Gate−drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 50 A
130
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
50
A
Pulse drain reverse current
(Note 1)
IDRP
200
A
Forward voltage (diode)
VDSF
VDR = 25 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
105
ns
Reverse recovery charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 100 A / μs
380
nC
Marking
2SK3131
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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