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TC7WG02FU データシート(PDF) 4 Page - Toshiba Semiconductor

部品番号 TC7WG02FU
部品情報  CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7WG02FU データシート(HTML) 4 Page - Toshiba Semiconductor

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TC7WG02FU/FK
2007-11-01
4
AC Characteristics (Input: tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
19.8
1.1~1.3
10.1
18.7
1.0
34.5
1.4~1.6
5.9
8.9
1.0
10.8
1.65~ 1.95
4.5
6.4
1.0
6.9
2.3~2.7
3.1
4.2
1.0
4.7
CL = 10 pF,
RL = 1 MΩ
3.0~3.6
2.3
3.4
1.0
4.0
0.9
22.5
1.1~1.3
11.6
21.5
1.0
37.2
1.4~1.6
6.6
9.8
1.0
12.0
1.65~ 1.95
5.0
7.1
1.0
7.3
2.3~2.7
3.5
4.5
1.0
5.1
CL = 15 pF,
RL = 1 MΩ
3.0~3.6
2.8
3.8
1.0
4.4
0.9
30.0
1.1~1.3
15.0
29.6
1.0
56.0
1.4~1.6
8.5
13.1
1.0
15.9
1.65~ 1.95
6.3
9.2
1.0
9.6
2.3~2.7
4.3
5.7
1.0
6.1
Propagation delay time
tpLH
tpHL
CL = 30 pF,
RL = 1 MΩ
3.0~3.6
3.5
4.4
1.0
4.8
ns
Input capacitance
CIN
3.6
3
pF
Power dissipation capacitance
CPD
(Note13)
0.9 ~ 3.6
11
pF
Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC/2


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