データシートサーチシステム |
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1SV309 データシート(PDF) 1 Page - Toshiba Semiconductor |
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1SV309 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV309 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV309 UHF SHF Tuning • High capacitance ratio: C2 V/C25 V = 5.7 (typ.) • Low series resistance: rs = 1.2 Ω (typ.) • Excellent C-V characteristics, and small tracking error. • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 30 V Peak reverse voltage VRM 35 (RL = 10 kΩ)V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 30 ⎯ ⎯ V Reverse current IR VR = 28 V ⎯ ⎯ 10 nA Capacitance C2 V VR = 2 V, f = 1 MHz 3.31 ⎯ 4.55 pF Capacitance C25 V VR = 25 V, f = 1 MHz 0.61 ⎯ 0.77 pF Capacitance ratio C2 V/C25 V ⎯ 5.0 ⎯ 6.5 ⎯ Series resistance rs VR = 1 V, f = 470 MHz ⎯ 1.2 2.0 Ω Note 1: Unites are compounded in one package and are matched to 6.0%. (min) C (min) C (max) C − <= 0.06 (VR = 2 to 25 V) Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) |
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