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データシートサーチシステム |
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データシートサーチシステム |
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2SA1203 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SA1203 データシート(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SA1203 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −30 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −30 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V DC current gain hFE (Note 3) VCE = −2 V, IC = −500 mA 100 ― 320 Collector-emitter saturation voltage VCE (sat) IC = −1.5 A, IB = −0.03 A ― ― −2.0 V Base-emitter voltage VBE VCE = −2 V, IC = −500 mA ― ― −1.0 V Transition frequency fT VCE = −2 V, IC = −500 mA ― 120 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― ― 50 pF Note 3: hFE classification O: 100 to 200, Y: 160 to 320 Marking H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
同様の部品番号 - 2SA1203 |
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同様の説明 - 2SA1203 |
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