データシートサーチシステム |
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TLP620 データシート(PDF) 3 Page - Toshiba Semiconductor |
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TLP620 データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP620,TLP620−2,TLP620−4 2007-10-01 3 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF (RMS) ― 16 20 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Forward current IF VF = ±0.7V ― 2.5 20 μA Capacitance CT V = 0, f = 1MHz ― 60 ― pF Collector −emitter breakdown voltage V (BR) CEO IC = 0.5mA 55 ― ― V Emitter −collector breakdown voltage V (BR) ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA Collector dark current ICEO VCE = 24V, Ta = 85°C ― 2 50 μA Capacitance (collector to emitter) CCE VCE = 0, f = 1MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 ― 600 Current transfer ratio IC / IF IF = ±5mA, VCE = 5V Rank GB 100 ― 600 % ― 60 ― Saturated CTR IC / IF (sat) IF = ±1mA, VCE = 0.4V Rank GB 30 ― ― % IC = 2.4mA, IF = ±8mA ― ― 0.4 ― 0.2 ― Collector −emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA Rank GB ― ― 0.4 V Off −state collector current IC (off) VF = ± 0.7V, VCE = 24V ― 1 10 μA CTR symmetry IC (ratio) IC (IF = −5mA) / IC (IF = +5mA) 0.33 1 3 ― |
同様の部品番号 - TLP620 |
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同様の説明 - TLP620 |
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