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TLP320-4 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TLP320-4
部品情報  GaAs Ired & Photo−Transistor
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP320-4 データシート(HTML) 1 Page - Toshiba Semiconductor

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TLP320,TLP320-2,TLP320-4
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP320, TLP320-2, TLP320-4
Telecommunication
Office Machine
Telephone Use Equipment
The TOSHIBA TLP320, −2 and −4 consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP320−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP320−4 provides four isolated channels in a
sixteen plastic DIP package. This is suitable for application of AC input
current up to 150mA.
• IF maximum rating: ±150mA
• Collector−emitter voltage: 55V (min.)
• Current transfer ratio: 25% (min.) (IF = 20mA)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: file No. E67349
• BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
Pin Configurations (top view)
2
TLP320
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
1
3
4
2
TLP320-2
1,3 : Anode
Cathode
2,4 : Cathode
Anode
5,7 : Emitter
6,8 : Collector
1
7
8
4
3
5
6
2
TLP320-4
1,3,5,7
: Anode
Cathode
2,4,6,8
: Cathode
Anode
9,11,13,15 : Emitter
10,12,14,16 : Collector
1
15
16
4
3
13
14
11
12
9
10
6
5
8
7
TOSHIBA
11−5B2
Weight: 0.26g
TOSHIBA
11−10C4
Weight: 0.54g
TOSHIBA
11−20A3
Weight: 1.1g
Unit in mm


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